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| AP9972GS/P RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 18m 60A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9972GP) are available for low-profile applications. G D GD S TO-263(S) TO-220(P) S Rating 60 25 60 38 230 89 0.7 Units V V A A A W W/ mJ A Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current3 Storage Temperature Range Operating Junction Temperature Range 3 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Units /W /W Data and specifications subject to change without notice 1 200803183 AP9972GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 55 32 8 20 11 58 45 80 280 230 1.7 Max. Units 18 22 3 10 25 100 51 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=10V, ID=35A VGS=4.5V, ID=25A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=250uA VDS=10V, ID=35A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=25V ID=35A VDS=48V VGS=4.5V VDS=30V ID=35A RG=3.3,VGS=10V RD=0.86 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 3170 5070 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=35A, VGS=0V IS=35A, VGS=0V, dI/dt=100A/s Min. - Typ. 50 48 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25 , IAS=30A. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP9972GS/P 200 150 10V 7.0V ID , Drain Current (A) 150 10V 7.0V ID , Drain Current (A) 100 5.0V 100 5.0V 4.5V 4.5V 50 50 T C =25 C 0 0 2 4 6 8 10 o V G =3.0V T C = 150 C o V G =3.0V 0 12 14 0 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.6 I D = 25 A T C =25 o C 18 1.4 I D =35A V G =10V Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (m) 1.2 1.0 16 0.8 14 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 20 15 T j =150 o C IS(A) 10 T j =25 o C Normalized VGS(th) (V) 1.2 0.7 5 0 0 0.2 0.4 0.6 0.8 1 1.2 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9972GS/P f=1.0MHz 12 10000 I D = 35 A VGS , Gate to Source Voltage (V) 10 8 V DS =48V V DS =38V V DS =30V C (pF) 1000 C iss 6 4 2 C oss C rss 0 0 20 40 60 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 ID (A) 100us 1ms 10 0.1 0.1 0.05 PDM 10ms T C =25 o C Single Pulse t 0.02 T 0.01 100ms DC 10 100 1000 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 1 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 V DS =5V 80 VG T j =25 o C T j =150 o C ID , Drain Current (A) QG 4.5V 60 QGS 40 QGD 20 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E L2 A SYMBOLS Millimeters MIN NOM MAX L1 A 4.25 0.65 1.15 0.40 1.00 9.70 -----12.70 2.60 1.00 2.6 14.70 6.30 3.50 8.40 4.48 0.80 1.38 0.50 1.20 10.00 --2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.60 8.90 4.70 0.90 1.60 0.60 1.40 10.40 11.50 ---14.50 3.00 1.80 3.6 16 6.70 3.70 9.40 L5 c1 b b1 c c1 E E1 D L4 e L L1 L2 L3 L4 L5 L3 b1 L D b c 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code 9972GP LOGO YWWSSS meet Rohs requirement Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS Millimeters MIN NOM MAX A A1 A2 4.25 0.00 2.20 0.70 1.07 0.30 1.15 8.30 9.70 2.04 ----4.50 ----- 4.75 0.15 2.45 0.90 1.27 0.45 1.30 8.90 10.10 2.54 1.50 4.90 1.50 5.20 0.30 2.70 1.10 1.47 0.60 1.45 9.40 10.50 3.04 ----5.30 ---- D b b1 c c1 L2 b1 L3 b D E e L2 L3 L4 e L4 A A2 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. c1 c A1 Part Marking Information & Packing : TO-263 Part Number Package Code XXXXXS 9972GS meet Rohs requirement YWWSSS LOGO Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 6 |
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